Non-volatile memories that are faster, cheaper and less power-hungry than existing solutions might be built by using solid-state devices in which information is stored and read electrically rather ...
A technical paper titled “Impact of Technology Scaling and Back-End-of-the-Line Technology Solutions on Magnetic Random-Access Memories” was published by researchers at Georgia Institute of Technology ...
A new technical paper titled “Modeling and Optimization of Two-Terminal Spin-Orbit-Torque MRAM” was published by researchers at Georgia Institute of Technology, MIT, and Cornell University. “This ...
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